Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 6 A [1] |
| Base Product Number | MJD42 [1] |
| Current - Collector Cutoff (Max) | 1µA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 4V [1] |
| Frequency - Transition | 3MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Grade | Automotive [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 1.5 W [1] |
| Product Status | Active [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 600mA, 6A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 100 V [1] |
| Qualification | AEC-Q101 [1] |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 [1] |
Specification references[1]Diodes Incorporated MJD42CQ-13 vendor product record ↗
