Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA [1] |
| Base Product Number | MJD35 [1] |
| Current - Collector Cutoff (Max) | 100µA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -65°C ~ 150°C (TJ) [1] |
| Power - Max | 15 W [1] |
| Product Status | Obsolete [1] |
| Transistor Type | PNP [1] |
| Voltage - Collector Emitter Breakdown (Max) | 300 V [1] |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 [1] |
Specification references[1]onsemi MJD350G vendor product record ↗
