MJD31CQ-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

Diodes Incorporated · exact orderable part

MJD31CQ-13

TRANS NPN 100V 3A TO252-3

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
100 V
Current - Collector (Ic) (Max)
3 A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Frequency - Transition
3MHz
Power - Max
15 W
Current - Collector Cutoff (Max)
1µA
Operating Temperature
-55°C~150°C(TJ)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

MJD31CQ-13 technical parameters
ParameterValue
Current - Collector (Ic) (Max)3 A [1]
Base Product NumberMJD31 [1]
Current - Collector Cutoff (Max)1µA [1]
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A, 4V [1]
Frequency - Transition3MHz [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max15 W [1]
Product StatusActive [1]
Transistor TypeNPN [1]
Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A [1]
Voltage - Collector Emitter Breakdown (Max)100 V [1]
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63 [1]

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