Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 3 A [1] |
| Base Product Number | MJD31 [1] |
| Current - Collector Cutoff (Max) | 50µA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V [1] |
| Frequency - Transition | 3MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -65°C~150°C(TJ) [1] |
| Power - Max | 1.56 W [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 100 V [1] |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA [1] |
Specification references[1]onsemi MJD31C1 vendor product record ↗
