Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 4 A [1] |
| Base Product Number | MJD243 [1] |
| Current - Collector Cutoff (Max) | 100nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V [1] |
| Frequency - Transition | 40MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -65°C ~ 150°C (TJ) [1] |
| Power - Max | 1.4 W [1] |
| Product Status | Active [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 100 V [1] |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 [1] |
Specification references[1]onsemi MJD243G vendor product record ↗
