MJD243 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

MJD243

TRANS NPN 100V 4A DPAK

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
100 V
Current - Collector (Ic) (Max)
4 A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 200mA, 1V
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Frequency - Transition
40MHz
Power - Max
1.4 W
Current - Collector Cutoff (Max)
100nA (ICBO)
Operating Temperature
-65°C ~ 150°C (TJ)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting typeSurface Mount
PackingTube

Technical parameters

Technical specifications

MJD243 technical parameters
ParameterValue
Current - Collector (Ic) (Max)4 A [1]
Base Product NumberMJD24 [1]
Current - Collector Cutoff (Max)100nA (ICBO) [1]
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 1V [1]
Frequency - Transition40MHz [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-65°C ~ 150°C (TJ) [1]
Power - Max1.4 W [1]
Product StatusObsolete [1]
Transistor TypeNPN [1]
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A [1]
Voltage - Collector Emitter Breakdown (Max)100 V [1]
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63 [1]

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