Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 5 A [1] |
| Base Product Number | MJD210 [1] |
| Current - Collector Cutoff (Max) | 100nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V [1] |
| Frequency - Transition | 65MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -65°C~150°C(TJ) [1] |
| Power - Max | 1.4 W [1] |
| Product Status | Active [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 25 V [1] |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 [1] |
Specification references[1]onsemi MJD210G vendor product record ↗
