MJD210G representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

MJD210G

TRANS PNP 25V 5A DPAK

Transistor Type
PNP
Voltage - Collector Emitter Breakdown (Max)
25 V
Current - Collector (Ic) (Max)
5 A
DC Current Gain (hFE) (Min) @ Ic, Vce
45 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1A, 5A
Frequency - Transition
65MHz
Power - Max
1.4 W
Current - Collector Cutoff (Max)
100nA (ICBO)
Operating Temperature
-65°C~150°C(TJ)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting typeSurface Mount
PackingTube

Technical parameters

Technical specifications

MJD210G technical parameters
ParameterValue
Current - Collector (Ic) (Max)5 A [1]
Base Product NumberMJD210 [1]
Current - Collector Cutoff (Max)100nA (ICBO) [1]
DC Current Gain (hFE) (Min) @ Ic, Vce45 @ 2A, 1V [1]
Frequency - Transition65MHz [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-65°C~150°C(TJ) [1]
Power - Max1.4 W [1]
Product StatusActive [1]
Transistor TypePNP [1]
Vce Saturation (Max) @ Ib, Ic1.8V @ 1A, 5A [1]
Voltage - Collector Emitter Breakdown (Max)25 V [1]
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63 [1]

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