Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 8 A [1] |
| Base Product Number | MJD12 [1] |
| Current - Collector Cutoff (Max) | 10µA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V [1] |
| Frequency - Transition | 4MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Power - Max | 20 W [1] |
| Product Status | Obsolete [1] |
| Transistor Type | PNP - Darlington [1] |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 16mA, 4A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 100 V [1] |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 [1] |
Specification references[1]onsemi MJD127 vendor product record ↗
