MJD112G representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

MJD112G

TRANS NPN DARL 100V 2A DPAK

Transistor Type
NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)
100 V
Current - Collector (Ic) (Max)
2 A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Frequency - Transition
25MHz
Power - Max
1.75 W
Current - Collector Cutoff (Max)
20µA
Operating Temperature
-65°C~150°C(TJ)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting typeSurface Mount
PackingTube

Technical parameters

Technical specifications

MJD112G technical parameters
ParameterValue
Current - Collector (Ic) (Max)2 A [1]
Base Product NumberMJD112 [1]
Current - Collector Cutoff (Max)20µA [1]
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V [1]
Frequency - Transition25MHz [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-65°C~150°C(TJ) [1]
Power - Max1.75 W [1]
Product StatusActive [1]
Transistor TypeNPN - Darlington [1]
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A [1]
Voltage - Collector Emitter Breakdown (Max)100 V [1]
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63 [1]

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