MJ11032 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

onsemi · exact orderable part

MJ11032

TRANS NPN DARL 120V 50A TO204

Transistor Type
NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)
120 V
Current - Collector (Ic) (Max)
50 A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 25A, 5V
Vce Saturation (Max) @ Ib, Ic
3.5V @ 500mA, 50A
Power - Max
300 W
Current - Collector Cutoff (Max)
2mA
Operating Temperature
-55°C ~ 200°C (TJ)
Product Status
Obsolete
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-204AE
Mounting typeThrough Hole
PackingTray

Technical parameters

Technical specifications

MJ11032 technical parameters
ParameterValue
Current - Collector (Ic) (Max)50 A [1]
Base Product NumberMJ110 [1]
Current - Collector Cutoff (Max)2mA [1]
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 25A, 5V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C ~ 200°C (TJ) [1]
Power - Max300 W [1]
Product StatusObsolete [1]
Transistor TypeNPN - Darlington [1]
Vce Saturation (Max) @ Ib, Ic3.5V @ 500mA, 50A [1]
Voltage - Collector Emitter Breakdown (Max)120 V [1]
Package / CaseTO-204AE [1]

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