Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | MBR835 [1] |
| Current - Average Rectified (Io) | 8A [1] |
| Current - Reverse Leakage @ Vr | 1 mA @ 35 V [1] |
| Diode Type | Schottky [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature - Junction | -65°C~125°C [1] |
| Product Status | Obsolete [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Voltage - DC Reverse (Vr) (Max) | 35 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 550 mV @ 8 A [1] |
| Package / Case | DO-201AA, DO-27, Axial [1] |
Specification references[1]onsemi MBR835RL vendor product record ↗
