MBR8170TFSTXG representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN12 sourced attributes1 source document

onsemi · exact orderable part

MBR8170TFSTXG

DIODE SCHOTTKY 170V 8A 8WDFN

Diode Type
Schottky
Voltage - DC Reverse (Vr) (Max)
170 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
890 mV @ 8 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
30 µA @ 170 V
Capacitance @ Vr, F
237pF @ 1V, 1MHz
Operating Temperature - Junction
-55°C~175°C
Mounting Type
Surface Mount
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / case8-PowerWDFN
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

MBR8170TFSTXG technical parameters
ParameterValue
Capacitance @ Vr, F237pF @ 1V, 1MHz [1]
Current - Average Rectified (Io)8A [1]
Current - Reverse Leakage @ Vr30 µA @ 170 V [1]
Diode TypeSchottky [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature - Junction-55°C~175°C [1]
Product StatusActive [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
Voltage - DC Reverse (Vr) (Max)170 V [1]
Voltage - Forward (Vf) (Max) @ If890 mV @ 8 A [1]
Package / Case8-PowerWDFN [1]

Catalog relationships

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