Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | MBR2060 [1] |
| Current - Average Rectified (Io) (per Diode) | 20A [1] |
| Current - Reverse Leakage @ Vr | 100 µA @ 60 V [1] |
| Diode Configuration | 1 Pair Common Cathode [1] |
| Diode Type | Schottky [1] |
| Mfr | Taiwan Semiconductor Corporation [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature - Junction | -55°C~150°C [1] |
| Product Status | Active [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Voltage - DC Reverse (Vr) (Max) | 60 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 20 A [1] |
Specification references[1]Taiwan Semiconductor Corporation MBR2060CT vendor product record ↗