Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | MBR1060 [1] |
| Current - Average Rectified (Io) | 10A [1] |
| Current - Reverse Leakage @ Vr | 100 µA @ 60 V [1] |
| Diode Type | Schottky [1] |
| Mfr | onsemi [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature - Junction | -65°C~175°C [1] |
| Product Status | Active [1] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [1] |
| Series | SWITCHMODE™ [1] |
| Voltage - DC Reverse (Vr) (Max) | 60 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 10 A [1] |
| Package / Case | TO-220-2 [1] |
Specification references[1]onsemi MBR1060G vendor product record ↗
