Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | LBN150 [1] |
| Current - Collector (Ic) (Max) | 200mA [1] |
| Current - Collector Cutoff (Max) | 50nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 1V / 32 @ 100mA, 1V [1] |
| Frequency - Transition | 250MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 300mW [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN, PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 40V [1] |
| Package / Case | SOT-23-6 [1] |
Specification references[1]Diodes Incorporated LBN150B01-7 vendor product record ↗
