KSP12BU representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN12 sourced attributes1 source document

onsemi · exact orderable part

KSP12BU

TRANS NPN DARL 20V TO92-3

Transistor Type
NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)
20 V
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
1V @ 10µA, 10mA
Power - Max
625 mW
Current - Collector Cutoff (Max)
100nA
Operating Temperature
150°C(TJ)
Product Status
Obsolete
Mounting Type
Through Hole
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting typeThrough Hole
PackingBulk

Technical parameters

Technical specifications

KSP12BU technical parameters
ParameterValue
Base Product NumberKSP12 [1]
Current - Collector Cutoff (Max)100nA [1]
DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 10mA, 5V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature150°C(TJ) [1]
Power - Max625 mW [1]
Product StatusObsolete [1]
Transistor TypeNPN - Darlington [1]
Vce Saturation (Max) @ Ib, Ic1V @ 10µA, 10mA [1]
Voltage - Collector Emitter Breakdown (Max)20 V [1]
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads [1]

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