IV1Q12160T4 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN15 sourced attributes1 source document

Inventchip · exact orderable part

IV1Q12160T4

SIC MOSFET, 1200V 160MOHM, TO-24

Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
20V
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
885 pF @ 800 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerInventchip
Package / caseTO-247-4
Mounting typeunknown
PackingTube

Technical parameters

Technical specifications

IV1Q12160T4 technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C20A (Tc) [1]
Drain to Source Voltage (Vdss)1200 V [1]
Drive Voltage (Max Rds On, Min Rds On)20V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs43 nC @ 20 V [1]
Input Capacitance (Ciss) (Max) @ Vds885 pF @ 800 V [1]
MfrInventchip [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C ~ 175°C (TJ) [1]
Power Dissipation (Max)138W (Tc) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs195mOhm @ 10A, 20V [1]
TechnologySiCFET (Silicon Carbide) [1]
Vgs (Max)+20V, -5V [1]
Vgs(th) (Max) @ Id2.9V @ 1.9mA [1]

Catalog relationships

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IV1Q12160T4 Inventchip Datasheet, Specs and RFQ | MPNHarbor