Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 1200 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 20V [1] |
| FET Type | N-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 20 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 2770 pF @ 800 V [1] |
| Mfr | Inventchip [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C ~ 175°C (TJ) [1] |
| Power Dissipation (Max) | 327W (Tc) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 20A, 20V [1] |
| Technology | SiCFET (Silicon Carbide) [1] |
| Vgs (Max) | +20V, -5V [1] |
| Vgs(th) (Max) @ Id | 3.2V @ 6mA [1] |
Specification references[1]Inventchip IV1Q12050T3 vendor product record ↗