IV1D12020T2 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

Inventchip · exact orderable part

IV1D12020T2

DIODE SIL CARB 1.2KV 54A TO247-2

Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
54A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 20 A
Reverse Recovery Time (trr)
0 ns
Speed
No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr
120 µA @ 1200 V
Capacitance @ Vr, F
1114pF @ 1V, 1MHz
Operating Temperature - Junction
-55°C~175°C
Original manufacturerCommercial terms confirmed per lot
ManufacturerInventchip
Package / caseTO-247-2
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

IV1D12020T2 technical parameters
ParameterValue
Capacitance @ Vr, F1114pF @ 1V, 1MHz [1]
Current - Average Rectified (Io)54A [1]
Current - Reverse Leakage @ Vr120 µA @ 1200 V [1]
Diode TypeSilicon Carbide Schottky [1]
MfrInventchip [1]
Mounting TypeThrough Hole [1]
Operating Temperature - Junction-55°C~175°C [1]
Product StatusActive [1]
Reverse Recovery Time (trr)0 ns [1]
SpeedNo Recovery Time > 500mA (Io) [1]
Voltage - DC Reverse (Vr) (Max)1200 V [1]
Voltage - Forward (Vf) (Max) @ If1.8 V @ 20 A [1]
Package / CaseTO-247-2 [1]

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IV1D12020T2 Inventchip Datasheet, Specs and RFQ | MPNHarbor