Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | IRF4905 [1] |
| Current - Continuous Drain (Id) @ 25°C | 74A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 55 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 10V [1] |
| FET Type | P-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V [1] |
| Mfr | Infineon Technologies [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature | -55°C ~ 175°C (TJ) [1] |
| Power Dissipation (Max) | 200W (Tc) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 38A, 10V [1] |
| Series | HEXFET® [1] |
| Technology | MOSFET (Metal Oxide) [1] |
| Vgs (Max) | ±20V [1] |
| Vgs(th) (Max) @ Id | 4V @ 250µA [1] |
Specification references[1]Infineon Technologies IRF4905PBF vendor product record ↗