Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | HTMN5130 [1] |
| Current - Continuous Drain (Id) @ 25°C | 2.6A [1] |
| Drain to Source Voltage (Vdss) | 55V [1] |
| FET Feature | Standard [1] |
| FET Type | 2 N-Channel (Dual) [1] |
| Gate Charge (Qg) (Max) @ Vgs | 8.9nC @ 10V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 218.7pF @ 25V [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~175°C(TJ) [1] |
| Power - Max | 1.7W [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3A, 10V [1] |
| Vgs(th) (Max) @ Id | 3V @ 250µA [1] |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) [1] |
Specification references[1]Diodes Incorporated HTMN5130SSD-13 vendor product record ↗
