HER103G representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

Yangjie Technology · exact orderable part

HER103G

DIODE GEN PURP 200V 1A DO41

Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
200 V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
1 V @ 1 A
Reverse Recovery Time (trr)
50 ns
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
5 µA @ 200 V
Capacitance @ Vr, F
20pF @ 4V, 1MHz
Operating Temperature - Junction
-55°C~125°C
Original manufacturerCommercial terms confirmed per lot
ManufacturerYangjie Technology
Package / caseDO-204AL, DO-41, Axial
Mounting typeThrough Hole
PackingTape & Box (TB)

Technical parameters

Technical specifications

HER103G technical parameters
ParameterValue
Capacitance @ Vr, F20pF @ 4V, 1MHz [1]
Current - Average Rectified (Io)1A [1]
Current - Reverse Leakage @ Vr5 µA @ 200 V [1]
Diode TypeStandard [1]
MfrYangjie Technology [1]
Mounting TypeThrough Hole [1]
Operating Temperature - Junction-55°C~125°C [1]
Product StatusActive [1]
Reverse Recovery Time (trr)50 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
Voltage - DC Reverse (Vr) (Max)200 V [1]
Voltage - Forward (Vf) (Max) @ If1 V @ 1 A [1]
Package / CaseDO-204AL, DO-41, Axial [1]

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