Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Mfr | Diodes Incorporated [1] |
| Product Status | Active [1] |
| Current - Collector (Ic) (Max) | 600mA, 500mA [1] |
| Current - Collector Cutoff (Max) | 100nA, 50nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 10mA, 1V / 100 @ 150mA, 10V [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C [1] |
| Power - Max | 200mW [1] |
| Transistor Type | 1 NPN, 1 PNP (H-Bridge) [1] |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 10mA, 100mA, 500mV @ 50mA, 500mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 60V, 80V [1] |
| Package / Case | 6-TSSOP, SC-88, SOT-363 [1] |
Specification references[1]Diodes Incorporated HBDM60V600X-7 vendor product record ↗
