Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | HBDM60V600 [1] |
| Current - Collector (Ic) (Max) | 500mA, 600mA [1] |
| Current - Collector Cutoff (Max) | 100nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V / 100 @ 150mA, 10V [1] |
| Frequency - Transition | 100MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 200mW [1] |
| Product Status | Obsolete [1] |
| Transistor Type | NPN, PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 65V, 60V [1] |
| Package / Case | 6-TSSOP, SC-88, SOT-363 [1] |
Specification references[1]Diodes Incorporated HBDM60V600W-7 vendor product record ↗
