H11G2VM representative package visual — not an exact-product photograph

Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image1 of 2

Exact MPN16 sourced attributes2 source documents

onsemi · exact orderable part

H11G2VM

OPTOISO 4.17KV DARL W/BASE 6DIP

Number of Channels: 1
Voltage - Isolation: 4170Vrms
Input Type: DC
Output Type: Darlington with Base
Voltage - Output (Max): 80V
Current Transfer Ratio (Min): 1000% @ 10mA
Current - DC Forward (If) (Max): 60 mA
Mounting Type: Through Hole
Turn On / Turn Off Time (Typ): 5µs, 100µs

Original manufacturerCommercial terms confirmed per lot

Manufactureronsemi

Package / case6-DIP (0.300", 7.62mm)

Mounting typeThrough Hole

PackingBulk

Technical parameters

Technical specifications

16 normalized values · 2 validated sources

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H11G2VM technical parameters
Parameter	Value
Base Product Number	H11G2 [2]
Current - DC Forward (If) (Max)	60 mA [2]
Current Transfer Ratio (Min)	1000% @ 10mA [2]
Input Type	DC [2]
Mfr	onsemi [2]
Mounting Type	Through Hole [2]
Number of Channels	1 [2]
Operating Temperature	-40°C ~ 100°C [2]
Output Type	Darlington with Base [2]
Product Status	Active [2]
Turn On / Turn Off Time (Typ)	5µs, 100µs [2]
Vce Saturation (Max)	1V [2]
Voltage - Forward (Vf) (Typ)	1.3V [2]
Voltage - Isolation	4170Vrms [2]
Voltage - Output (Max)	80V [2]
Package / Case	6-DIP (0.300", 7.62mm) [2]

Specification references[1]H11G2VM delivered document ↗[2]onsemi H11G2VM vendor product record ↗

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ManufactureronsemiView brand page →CategoryTransistor, Photovoltaic Output OptoisolatorsView category page →

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H11G2VM onsemi Datasheet, Specs and RFQ | MPNHarbor