FZT857QTA representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

Diodes Incorporated · exact orderable part

FZT857QTA

PWR HI VOLTAGE TRANSISTOR SOT223

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
300 V
Current - Collector (Ic) (Max)
3.5 A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA, 10V
Vce Saturation (Max) @ Ib, Ic
345mV @ 600mA, 3.5A
Frequency - Transition
80MHz
Power - Max
1.6 W
Current - Collector Cutoff (Max)
50nA
Operating Temperature
-55°C~150°C(TJ)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / caseTO-261-4, TO-261AA
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

FZT857QTA technical parameters
ParameterValue
Current - Collector (Ic) (Max)3.5 A [1]
Base Product NumberFZT857 [1]
Current - Collector Cutoff (Max)50nA [1]
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 10V [1]
Frequency - Transition80MHz [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max1.6 W [1]
Product StatusActive [1]
Transistor TypeNPN [1]
Vce Saturation (Max) @ Ib, Ic345mV @ 600mA, 3.5A [1]
Voltage - Collector Emitter Breakdown (Max)300 V [1]
Package / CaseTO-261-4, TO-261AA [1]

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