Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 2 A [1] |
| Base Product Number | FSB660 [1] |
| Current - Collector Cutoff (Max) | 100nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V [1] |
| Frequency - Transition | 75MHz [1] |
| Mfr | onsemi [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 500 mW [1] |
| Product Status | Obsolete [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 200mA, 2A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 60 V [1] |
| Package / Case | TO-236-3, SC-59, SOT-23-3 [1] |
Specification references[1]onsemi FSB660 vendor product record ↗
