FQP9N08 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes1 source document

onsemi · exact orderable part

FQP9N08

MOSFET N-CH 80V 9.3A TO220-3

FET Type
N-Channel
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
9.3A (Tc)
Rds On (Max) @ Id, Vgs
210mOhm @ 4.65A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±25V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 10 V
Power Dissipation (Max)
40W (Tc)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-220-3
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

FQP9N08 technical parameters
ParameterValue
Base Product NumberFQP9 [1]
Current - Continuous Drain (Id) @ 25°C9.3A (Tc) [1]
Drain to Source Voltage (Vdss)80 V [1]
Drive Voltage (Max Rds On, Min Rds On)10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs7.7 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 25 V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C~175°C(TJ) [1]
Power Dissipation (Max)40W (Tc) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs210mOhm @ 4.65A, 10V [1]
SeriesQFET® [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±25V [1]
Vgs(th) (Max) @ Id4V @ 250µA [1]
Package / CaseTO-220-3 [1]

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