FQP6P25 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes1 source document

onsemi · exact orderable part

FQP6P25

MOSFET P-CH 250V 6A TO220-3

FET Type
P-Channel
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
1.1Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Power Dissipation (Max)
90W (Tc)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-220-3
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

FQP6P25 technical parameters
ParameterValue
Base Product NumberFQP6 [1]
Current - Continuous Drain (Id) @ 25°C6A (Tc) [1]
Drain to Source Voltage (Vdss)250 V [1]
Drive Voltage (Max Rds On, Min Rds On)10V [1]
FET TypeP-Channel [1]
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds780 pF @ 25 V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)90W (Tc) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs1.1Ohm @ 3A, 10V [1]
SeriesQFET® [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±30V [1]
Vgs(th) (Max) @ Id5V @ 250µA [1]
Package / CaseTO-220-3 [1]

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