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FQP4N50 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN18 sourced attributes1 source document

onsemi · exact orderable part

FQP4N50

MOSFET N-CH 500V 3.4A TO220-3

FET Type
N-Channel
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
3.4A (Tc)
Rds On (Max) @ Id, Vgs
2.7Ohm @ 1.7A, 10V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Power Dissipation (Max)
70W (Tc)
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-220-3
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

18 normalized values · 1 validated source

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ParameterValue
Base Product NumberFQP4 [1]
Current - Continuous Drain (Id) @ 25°C3.4A (Tc) [1]
Drain to Source Voltage (Vdss)500 V [1]
Drive Voltage (Max Rds On, Min Rds On)10V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V [1]
Input Capacitance (Ciss) (Max) @ Vds460 pF @ 25 V [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power Dissipation (Max)70W (Tc) [1]
Product StatusObsolete [1]
Rds On (Max) @ Id, Vgs2.7Ohm @ 1.7A, 10V [1]
SeriesQFET® [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs (Max)±30V [1]
Vgs(th) (Max) @ Id5V @ 250µA [1]
Package / CaseTO-220-3 [1]
Specification references[1]onsemi FQP4N50 vendor product record ↗

Catalog relationships

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ManufactureronsemiView brand page →CategoryTransistors - FETs, MOSFETs - SingleView category page →Part familyQFET®Compare exact variants →

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