Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 5 A [1] |
| Current - Collector Cutoff (Max) | 100nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V [1] |
| Frequency - Transition | 110MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 1.7 W [1] |
| Product Status | Active [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 1mA, 10mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 15 V [1] |
| Package / Case | 3-UDFN Exposed Pad [1] |
Specification references[1]Diodes Incorporated FMMT411FDBW-7 vendor product record ↗
