FES16JT representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

FES16JT

DIODE GEN PURP 600V 16A TO220-2

Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
600 V
Current - Average Rectified (Io)
16A
Voltage - Forward (Vf) (Max) @ If
1.5 V @ 8 A
Reverse Recovery Time (trr)
50 ns
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
10 µA @ 600 V
Capacitance @ Vr, F
145pF @ 4V, 1MHz
Operating Temperature - Junction
-65°C~150°C
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseTO-220-2
Mounting typeThrough Hole
PackingTube

Technical parameters

Technical specifications

FES16JT technical parameters
ParameterValue
Base Product NumberFES16 [1]
Capacitance @ Vr, F145pF @ 4V, 1MHz [1]
Current - Average Rectified (Io)16A [1]
Current - Reverse Leakage @ Vr10 µA @ 600 V [1]
Diode TypeStandard [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature - Junction-65°C~150°C [1]
Product StatusObsolete [1]
Reverse Recovery Time (trr)50 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
Voltage - DC Reverse (Vr) (Max)600 V [1]
Voltage - Forward (Vf) (Max) @ If1.5 V @ 8 A [1]
Package / CaseTO-220-2 [1]

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