FDS8984 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes2 source documents

onsemi · exact orderable part

FDS8984

MOSFET 2N-CH 30V 7A 8SOIC

Configuration
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
7A
Rds On (Max) @ Id, Vgs
23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
Power - Max
1.6W
Input Capacitance (Ciss) (Max) @ Vds
635pF @ 15V
FET Feature
Logic Level Gate
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

FDS8984 technical parameters
ParameterValue
Base Product NumberFDS89 [2]
Configuration2 N-Channel (Dual) [2]
Current - Continuous Drain (Id) @ 25°C7A [2]
FET FeatureLogic Level Gate [2]
Drain to Source Voltage (Vdss)30V [2]
Input Capacitance (Ciss) (Max) @ Vds635pF @ 15V [2]
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V [2]
Mfronsemi [2]
Mounting TypeSurface Mount [2]
Operating Temperature-55°C ~ 150°C (TJ) [2]
Power - Max1.6W [2]
Product StatusActive [2]
Rds On (Max) @ Id, Vgs23mOhm @ 7A, 10V [2]
TechnologyMOSFET (Metal Oxide) [2]
Vgs(th) (Max) @ Id2.5V @ 250µA [2]
Package / Case8-SOIC (0.154", 3.90mm Width) [2]
SeriesPowerTrench® [2]

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