FDS6875 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN16 sourced attributes1 source document

onsemi · exact orderable part

FDS6875

MOSFET 2P-CH 20V 6A 8SOIC

FET Type
2 P-Channel (Dual)
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
6A
Rds On (Max) @ Id, Vgs
30mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31nC @ 5V
Power - Max
900mW
Input Capacitance (Ciss) (Max) @ Vds
2250pF @ 10V
FET Feature
Logic Level Gate
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

FDS6875 technical parameters
ParameterValue
Base Product NumberFDS68 [1]
Current - Continuous Drain (Id) @ 25°C6A [1]
Drain to Source Voltage (Vdss)20V [1]
FET FeatureLogic Level Gate [1]
FET Type2 P-Channel (Dual) [1]
Gate Charge (Qg) (Max) @ Vgs31nC @ 5V [1]
Input Capacitance (Ciss) (Max) @ Vds2250pF @ 10V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max900mW [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs30mOhm @ 6A, 4.5V [1]
SeriesPowerTrench® [1]
Vgs(th) (Max) @ Id1.5V @ 250µA [1]
Package / Case8-SOIC (0.154", 3.90mm Width) [1]

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