FDS4559 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

onsemi · exact orderable part

FDS4559

MOSFET N/P-CH 60V 8SOIC

Configuration
N and P-Channel
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
4.5A, 3.5A
Rds On (Max) @ Id, Vgs
55mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Power - Max
1W
Input Capacitance (Ciss) (Max) @ Vds
650pF @ 25V, 759pF @ 25V
FET Feature
Logic Level Gate
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / case8-SOIC (0.154", 3.90mm Width)
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

FDS4559 technical parameters
ParameterValue
Base Product NumberFDS45 [1]
ConfigurationN and P-Channel [1]
Current - Continuous Drain (Id) @ 25°C4.5A, 3.5A [1]
FET FeatureLogic Level Gate [1]
Drain to Source Voltage (Vdss)60V [1]
Input Capacitance (Ciss) (Max) @ Vds650pF @ 25V, 759pF @ 25V [1]
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V [1]
Mfronsemi [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C ~ 175°C (TJ) [1]
Power - Max1W [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs55mOhm @ 4.5A, 10V [1]
TechnologyMOSFET (Metal Oxide) [1]
Vgs(th) (Max) @ Id3V @ 250µA [1]
Package / Case8-SOIC (0.154", 3.90mm Width) [1]
SeriesPowerTrench® [1]

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