FBG04N08AC representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image1 of 2
Exact MPN14 sourced attributes1 source document

EPC Space, LLC · exact orderable part

FBG04N08AC

GAN FET HEMT 40V 8A COTS 4FSMD-A

Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drain to Source Voltage (Vdss)
40 V
Drive Voltage (Max Rds On, Min Rds On)
5V
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
2.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
312 pF @ 20 V
Original manufacturerCommercial terms confirmed per lot
ManufacturerEPC Space, LLC
Package / case4-SMD, No Lead
Mounting typeunknown
PackingTray

Technical parameters

Technical specifications

FBG04N08AC technical parameters
ParameterValue
Current - Continuous Drain (Id) @ 25°C8A (Tc) [1]
Drain to Source Voltage (Vdss)40 V [1]
Drive Voltage (Max Rds On, Min Rds On)5V [1]
FET TypeN-Channel [1]
Gate Charge (Qg) (Max) @ Vgs2.8 nC @ 5 V [1]
Input Capacitance (Ciss) (Max) @ Vds312 pF @ 20 V [1]
MfrEPC Space, LLC [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs24mOhm @ 8A, 5V [1]
TechnologyGaNFET (Gallium Nitride) [1]
Vgs (Max)+6V, -4V [1]
Vgs(th) (Max) @ Id2.5V @ 2mA [1]

Catalog relationships

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