Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) [1] |
| Drain to Source Voltage (Vdss) | 40 V [1] |
| Drive Voltage (Max Rds On, Min Rds On) | 5V [1] |
| FET Type | N-Channel [1] |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 5 V [1] |
| Input Capacitance (Ciss) (Max) @ Vds | 312 pF @ 20 V [1] |
| Mfr | EPC Space, LLC [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Product Status | Active [1] |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 8A, 5V [1] |
| Technology | GaNFET (Gallium Nitride) [1] |
| Vgs (Max) | +6V, -4V [1] |
| Vgs(th) (Max) @ Id | 2.5V @ 2mA [1] |
Specification references[1]EPC Space, LLC FBG04N08AC vendor product record ↗
