EGP30G representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN14 sourced attributes1 source document

onsemi · exact orderable part

EGP30G

DIODE GEN PURP 400V 3A DO201AD

Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
400 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
1.25 V @ 3 A
Reverse Recovery Time (trr)
50 ns
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
5 µA @ 400 V
Capacitance @ Vr, F
75pF @ 4V, 1MHz
Operating Temperature - Junction
-65°C~150°C
Original manufacturerCommercial terms confirmed per lot
Manufactureronsemi
Package / caseDO-201AD, Axial
Mounting typeThrough Hole
PackingTape & Reel (TR); Cut Tape (CT)

Technical parameters

Technical specifications

EGP30G technical parameters
ParameterValue
Base Product NumberEGP30 [1]
Capacitance @ Vr, F75pF @ 4V, 1MHz [1]
Current - Average Rectified (Io)3A [1]
Current - Reverse Leakage @ Vr5 µA @ 400 V [1]
Diode TypeStandard [1]
Mfronsemi [1]
Mounting TypeThrough Hole [1]
Operating Temperature - Junction-65°C~150°C [1]
Product StatusActive [1]
Reverse Recovery Time (trr)50 ns [1]
SpeedFast Recovery =< 500ns, > 200mA (Io) [1]
Voltage - DC Reverse (Vr) (Max)400 V [1]
Voltage - Forward (Vf) (Max) @ If1.25 V @ 3 A [1]
Package / CaseDO-201AD, Axial [1]

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