Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Base Product Number | EGP10 [2] |
| Current - Average Rectified (Io) | 1A [2] |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V [2] |
| Diode Type | Standard [2] |
| Mfr | onsemi [2] |
| Mounting Type | Through Hole [2] |
| Operating Temperature - Junction | -65°C~150°C [2] |
| Product Status | Active [2] |
| Reverse Recovery Time (trr) | 50 ns [2] |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) [2] |
| Voltage - DC Reverse (Vr) (Max) | 100 V [2] |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A [2] |
| Package / Case | DO-204AL, DO-41, Axial [2] |
Specification references[1]EGP10B delivered document ↗[2]onsemi EGP10B vendor product record ↗
