Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 4.8 A [1] |
| Base Product Number | DXTP5840 [1] |
| Current - Collector Cutoff (Max) | 100nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 10mA, 2V [1] |
| Frequency - Transition | 135MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 690 mW [1] |
| Product Status | Active [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 30mA, 3A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 40 V [1] |
| Package / Case | 3-UDFN Exposed Pad [1] |
Specification references[1]Diodes Incorporated DXTP5840CFDB-7 vendor product record ↗
