DXTN5820DFDB-7 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN13 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DXTN5820DFDB-7

SS LOW SAT TRANSISTOR U-DFN2020-

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
20 V
Current - Collector (Ic) (Max)
6 A
DC Current Gain (hFE) (Min) @ Ic, Vce
280 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic
275mV @ 300mA, 6A
Frequency - Transition
80MHz
Power - Max
690 mW
Current - Collector Cutoff (Max)
100nA
Operating Temperature
-55°C~150°C(TJ)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case3-UDFN Exposed Pad
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DXTN5820DFDB-7 technical parameters
ParameterValue
Current - Collector (Ic) (Max)6 A [1]
Current - Collector Cutoff (Max)100nA [1]
DC Current Gain (hFE) (Min) @ Ic, Vce280 @ 500mA, 2V [1]
Frequency - Transition80MHz [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max690 mW [1]
Product StatusActive [1]
Transistor TypeNPN [1]
Vce Saturation (Max) @ Ib, Ic275mV @ 300mA, 6A [1]
Voltage - Collector Emitter Breakdown (Max)20 V [1]
Package / Case3-UDFN Exposed Pad [1]

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DXTN5820DFDB-7 Diodes Incorporated Datasheet, Specs and RFQ | MPNHarbor