Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 6 A [1] |
| Current - Collector Cutoff (Max) | 100nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 500mA, 2V [1] |
| Frequency - Transition | 80MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 690 mW [1] |
| Product Status | Active [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 275mV @ 300mA, 6A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 20 V [1] |
| Package / Case | 3-UDFN Exposed Pad [1] |
Specification references[1]Diodes Incorporated DXTN5820DFDB-7 vendor product record ↗
