Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 4 A [1] |
| Current - Collector Cutoff (Max) | 100nA [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 340 @ 200mA, 2V [1] |
| Frequency - Transition | 125MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Grade | Automotive [1] |
| Operating Temperature | -55°C ~ 175°C (TJ) [1] |
| Power - Max | 1.8 W [1] |
| Product Status | Active [1] |
| Transistor Type | NPN [1] |
| Vce Saturation (Max) @ Ib, Ic | 320mV @ 200mA, 4A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 60 V [1] |
| Qualification | AEC-Q101 [1] |
| Package / Case | 3-UDFN Exposed Pad [1] |
Specification references[1]Diodes Incorporated DXTN10060DFJBWQ-7 vendor product record ↗
