Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 5.5 A [1] |
| Base Product Number | DXT2012 [1] |
| Current - Collector Cutoff (Max) | 20nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 1V [1] |
| Frequency - Transition | 120MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 3.2 W [1] |
| Product Status | Active [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500mA, 5A [1] |
| Voltage - Collector Emitter Breakdown (Max) | 60 V [1] |
| Package / Case | PowerDI™ 5 [1] |
Specification references[1]Diodes Incorporated DXT2012P5-13 vendor product record ↗
