Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 1 A [2] |
| Base Product Number | DSS5160 [2] |
| Current - Collector Cutoff (Max) | 100nA (ICBO) [2] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V [2] |
| Frequency - Transition | 150MHz [2] |
| Mfr | Diodes Incorporated [2] |
| Mounting Type | Surface Mount [2] |
| Grade | Automotive [2] |
| Operating Temperature | -55°C ~ 150°C (TJ) [2] |
| Power - Max | 725 mW [2] |
| Product Status | Active [2] |
| Transistor Type | PNP [2] |
| Vce Saturation (Max) @ Ib, Ic | 340mV @ 100mA, 1A [2] |
| Voltage - Collector Emitter Breakdown (Max) | 60 V [2] |
| Qualification | AEC-Q101 [2] |
| Package / Case | TO-236-3, SC-59, SOT-23-3 [2] |
Specification references[1]DSS5160TQ-7 delivered document ↗[2]Diodes Incorporated DSS5160TQ-7 vendor product record ↗
