Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Capacitance @ Vr, F | 149pF @ 100mV, 1MHz [1] |
| Current - Average Rectified (Io) | 4A [1] |
| Current - Reverse Leakage @ Vr | 170 µA @ 650 V [1] |
| Diode Type | Silicon Carbide Schottky [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Through Hole [1] |
| Operating Temperature - Junction | -55°C~175°C [1] |
| Product Status | Active [1] |
| Reverse Recovery Time (trr) | 0 ns [1] |
| Speed | No Recovery Time > 500mA (Io) [1] |
| Voltage - DC Reverse (Vr) (Max) | 650 V [1] |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A [1] |
| Package / Case | TO-220-2 [1] |
Specification references[1]Diodes Incorporated DSC04065 vendor product record ↗
