Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Capacitance @ Vr, F | 132pF @ 100mV, 1MHz [2] |
| Current - Average Rectified (Io) | 2A [2] |
| Current - Reverse Leakage @ Vr | 128 µA @ 1200 V [2] |
| Diode Type | Silicon Carbide Schottky [2] |
| Mfr | Diodes Incorporated [2] |
| Mounting Type | Through Hole [2] |
| Operating Temperature - Junction | -55°C~175°C [2] |
| Product Status | Active [2] |
| Reverse Recovery Time (trr) | 0 ns [2] |
| Speed | No Recovery Time > 500mA (Io) [2] |
| Voltage - DC Reverse (Vr) (Max) | 1200 V [2] |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 2 A [2] |
| Package / Case | TO-220-2 Full Pack, Isolated Tab [2] |
Specification references[1]DSC02120FP delivered document ↗[2]Diodes Incorporated DSC02120FP vendor product record ↗
