Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 1 A [1] |
| Base Product Number | DRDN010 [1] |
| Current - Collector Cutoff (Max) | 1µA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 100mA, 1V [1] |
| Frequency - Transition | 100MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C ~ 150°C (TJ) [1] |
| Power - Max | 200 mW [1] |
| Part Status | Obsolete [1] |
| Transistor Type | NPN + Diode (Isolated) [1] |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 30mA, 300mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 18 V [1] |
| Package / Case | 6-TSSOP, SC-88, SOT-363 [1] |
Specification references[1]Diodes Incorporated DRDN010W-7 vendor product record ↗
