DRDN005W-7 representative package visual — not an exact-product photograph
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Exact MPN14 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DRDN005W-7

TRANS NPN 80V 0.5A SOT363

Transistor Type
NPN + Diode (Isolated)
Voltage - Collector Emitter Breakdown (Max)
80 V
Current - Collector (Ic) (Max)
500 mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Frequency - Transition
100MHz
Power - Max
200 mW
Current - Collector Cutoff (Max)
100nA
Operating Temperature
-55°C~150°C(TJ)
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case6-TSSOP, SC-88, SOT-363
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DRDN005W-7 technical parameters
ParameterValue
Current - Collector (Ic) (Max)500 mA [1]
Base Product NumberDRDN005 [1]
Current - Collector Cutoff (Max)100nA [1]
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V [1]
Frequency - Transition100MHz [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~150°C(TJ) [1]
Power - Max200 mW [1]
Product StatusObsolete [1]
Transistor TypeNPN + Diode (Isolated) [1]
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA [1]
Voltage - Collector Emitter Breakdown (Max)80 V [1]
Package / Case6-TSSOP, SC-88, SOT-363 [1]

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