Technical parameters
Technical specifications
| Parameter | Value |
|---|---|
| Current - Collector (Ic) (Max) | 100 mA [1] |
| Base Product Number | DP0150 [1] |
| Current - Collector Cutoff (Max) | 100nA (ICBO) [1] |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V [1] |
| Frequency - Transition | 80MHz [1] |
| Mfr | Diodes Incorporated [1] |
| Mounting Type | Surface Mount [1] |
| Operating Temperature | -55°C~150°C(TJ) [1] |
| Power - Max | 450 mW [1] |
| Product Status | Active [1] |
| Transistor Type | PNP [1] |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA [1] |
| Voltage - Collector Emitter Breakdown (Max) | 50 V [1] |
| Package / Case | 3-XFDFN [1] |
Specification references[1]Diodes Incorporated DP0150BLP4-7B vendor product record ↗
