DMTH6016LPD-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN16 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMTH6016LPD-13

MOSFET BVDSS: 41V-60V POWERDI506

FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
9.2A (Ta), 33.2A (Tc)
Rds On (Max) @ Id, Vgs
19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Power - Max
2.5W (Ta), 37.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds
864pF @ 30V
FET Feature
Standard
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-PowerTDFN
Mounting typeSurface Mount
PackingTape & Reel (TR)

Technical parameters

Technical specifications

DMTH6016LPD-13 technical parameters
ParameterValue
Base Product NumberDMTH6016 [1]
Current - Continuous Drain (Id) @ 25°C9.2A (Ta), 33.2A (Tc) [1]
Drain to Source Voltage (Vdss)60V [1]
FET FeatureStandard [1]
FET Type2 N-Channel (Dual) [1]
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V [1]
Input Capacitance (Ciss) (Max) @ Vds864pF @ 30V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~175°C(TJ) [1]
Power - Max2.5W (Ta), 37.5W (Tc) [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs19mOhm @ 10A, 10V [1]
SeriesAutomotive, AEC-Q101 [1]
Vgs(th) (Max) @ Id2.5V @ 250µA [1]
Package / Case8-PowerTDFN [1]

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