DMTH6010LPD-13 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN16 sourced attributes1 source document

Diodes Incorporated · exact orderable part

DMTH6010LPD-13

MOSFET 2N-CHA 60V 13.1A POWERDI

FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
13.1A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs
11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40.2nC @ 10V
Power - Max
2.8W
Input Capacitance (Ciss) (Max) @ Vds
2615pF @ 30V
FET Feature
Standard
Original manufacturerCommercial terms confirmed per lot
ManufacturerDiodes Incorporated
Package / case8-PowerTDFN
Mounting typeSurface Mount
PackingTape & Reel (TR); Cut Tape (CT); Digi-Reel®

Technical parameters

Technical specifications

DMTH6010LPD-13 technical parameters
ParameterValue
Base Product NumberDMTH6010 [1]
Current - Continuous Drain (Id) @ 25°C13.1A (Ta), 47.6A (Tc) [1]
Drain to Source Voltage (Vdss)60V [1]
FET FeatureStandard [1]
FET Type2 N-Channel (Dual) [1]
Gate Charge (Qg) (Max) @ Vgs40.2nC @ 10V [1]
Input Capacitance (Ciss) (Max) @ Vds2615pF @ 30V [1]
MfrDiodes Incorporated [1]
Mounting TypeSurface Mount [1]
Operating Temperature-55°C~175°C(TJ) [1]
Power - Max2.8W [1]
Product StatusActive [1]
Rds On (Max) @ Id, Vgs11mOhm @ 20A, 10V [1]
SeriesAutomotive, AEC-Q101 [1]
Vgs(th) (Max) @ Id3V @ 250µA [1]
Package / Case8-PowerTDFN [1]

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